BUK92150-55A
Description
N-channel enhancement mode field-effect power transistor in a plastic package using Trench MOS™ technology, featuring very low on-state resistance. Product availability: BUK92150-55A in SOT428 (D-PAK).
2. Features s s s s Trench MOS™ technology Q101 pliant 175 °C rated Logic level patible.
3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning
- SOT428 (D-PAK), simplified outline and symbol Description gate (g) mb d
Simplified outline
Symbol drain (d) source (s) mounting base; connected to drain (d) g s
MBB076
2 1 Top view 3
MBK091
SOT428 (D-PAK)
Philips Semiconductors
BUK92150-55A w w w logic . D a level t a S FET h e e Trench MOS™ t 4 U . c
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25 °C; VGS = 5 V; ID = 5 A Tj = 25 °C; VGS = 4.5 V; ID = 5 A Tj = 25 °C; VGS = 10 V; ID...
