N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance.
Key Features
s TrenchMOSTM technology s 175 °C rated s Q101 compliant s Logic level compatible
1.3.
Full PDF Text Transcription for BUK9214-75B (Reference)
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BUK9214-75B TrenchMOS™ logic level FET M3D300 www.DataSheet4U.com Rev. 01 — 10 December 2002 Objective data 1. Product profile 1.1 Description N-channel enhancement mode fi...
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ve data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9214-75B in SOT428 (D-PAK) 1.2 Features s TrenchMOSTM technology s 175 °C rated s Q101 compliant s Logic level compatible 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V, and 42 V loads s General purpose power switching 1.4 Quick reference data s EDS(AL)S ≤ 131 mJ s ID ≤ 71 A s RDSon = 11.9 mΩ (typ) s Ptot ≤ 150 W 2.
BUK9214-75B Datasheet
