BUK9214-75B
Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) Trench MOS™ technology, featuring very low on-state resistance. Product availability: BUK9214-75B in SOT428 (D-PAK)
1.2 Features s Trench MOSTM technology s 175 °C rated s Q101 pliant s Logic level patible
1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V, and 42 V loads s General purpose power switching
1.4 Quick reference data s EDS(AL)S ≤ 131 m J s ID ≤ 71 A s RDSon = 11.9 mΩ (typ) s Ptot ≤ 150 W
2. Pinning information
Table 1: Pin 1 2 3 mb Pinning
- SOT428 (D-PAK), simplified outline and symbol Simplified outline
[1] mb
Description gate (g) drain (d) source (s) mounting base; connected to drain (d)
Symbol d g s
MBB076
2 1 Top view 3
MBK091
SOT428 (D-PAK)
[1] It is not possible to make connection to pin 2 of the SOT428 package.
Philips Semiconductors
.. Trench MOS™ logic level FET
3. Limiting...
