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NTE2917 MOSFET Silicon N−Channel JFET Transistor w/Internal Diode for ECM Impedance Converter Applications TO92S Type Package
D
Features: D Compact Package D High Forward Transfer Admittance D Low Capacitance D Includes Diode and High Resistance at G − S
G S
Absolute Maximum Ratings: Drain−to−Source Voltage (VGS = −1.0V), VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate−to−Drain Voltage, VGDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −20V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2917 Datasheet
