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NTE291 - N-Channel MOSFET

Description

The NTE291 (NPN) and NTE292 (PNP) are General Purpose Medium

Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications.

Features

  • D Low Saturation Voltage Absolute Maximum Ratings: Collector.
  • to.
  • Base Voltage, VCBO.
  • . . 130V Collector.
  • to.
  • Emitter Voltage (RBB = 100Ω, VBB = 0), VCEX.
  • . . . . 130V Collector.
  • to.
  • Emitter Voltage, VCEO.
  • 120V Emitter.
  • To.

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Datasheet Details

Part number NTE291
Manufacturer NTE Electronics (defunct)
File Size 24.12 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE291 Datasheet

Full PDF Text Transcription

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NTE291 (NPN) & NTE292 (PNP) Silicon Complementary Transistors Medium Power Amp, Switch Description: The NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications. They are especially designed for series and shunt regulators and as a driver and output stage of high–fidelity amplifiers. Features: D Low Saturation Voltage Absolute Maximum Ratings: Collector–to–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V Collector–to–Emitter Voltage (RBB = 100Ω, VBB = 0), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V Collector–to–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . .
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