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NTE2914 - N-Channel MOSFET

Features

  • D Low On.
  • Resistance: RDS = 0.026W Typ. D High Speed Switching D 4V Gate Drive Device can be Driven from 5V Source Absolute Maximum Ratings: (TA = +255C unless otherwise specified) Drain.
  • to.
  • Source Voltage, VDSS.
  • . . . . 60V Gate.
  • to.
  • Source Voltage, VGSS.
  • . . . +20V Continuous Drain.

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Datasheet Details

Part number NTE2914
Manufacturer NTE Electronics (defunct)
File Size 71.43 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE2914 Datasheet

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Full PDF Text Transcription

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NTE2914 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220FM Type Package Features: D Low On−Resistance: RDS = 0.026W Typ. D High Speed Switching D 4V Gate Drive Device can be Driven from 5V Source Absolute Maximum Ratings: (TA = +255C unless otherwise specified) Drain−to−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate−to−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Continuous Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak Drain Current (Note 1), ID(pulse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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