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NTE2911 - N-Channel MOSFET

Features

  • D Low Drain.
  • Source ON.
  • Resistance D High Forward Transfer Admittance D Low Leakage Current D Enhancement Mode G S Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain.
  • Source Voltage, VDSS.
  • . 500V Drain.
  • Gate Voltage (RGS = 20k), VDGR.
  • 500V Gate.
  • Sourc.

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Datasheet Details

Part number NTE2911
Manufacturer NTE Electronics (defunct)
File Size 67.99 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE2911 Datasheet

Full PDF Text Transcription

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NTE2911 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package D Features: D Low Drain−Source ON−Resistance D High Forward Transfer Admittance D Low Leakage Current D Enhancement Mode G S Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain−Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current (Note Continuous . 2), ... I.D. . . . . . . . . . . .
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