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NTE2912 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package
Features: D Advanced Process technology D Ultra Low ON−Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated
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Description: The NTE2912 Power MOSFET utilizes advanced processing techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO220 package is universally preferred for all commercial−industrial applications at power dissipation levels to approximately 50 watts.
NTE2912 Datasheet
