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NTE2916 - N-Channel MOSFET

Description

S The NTE2916 Power MOSFET utilizes advanced processing techniques to achieve extremely low on

resistance per silicon area.

Features

  • D D Advanced Process Technology D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated G D Ease of Paralleling.

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Datasheet Details

Part number NTE2916
Manufacturer NTE Electronics (defunct)
File Size 75.18 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE2916 Datasheet

Full PDF Text Transcription

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NTE2916 MOSFET N−Ch, Enhancement Mode High Speed Switch TO247 Type Package Features: D D Advanced Process Technology D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated G D Ease of Paralleling Description: S The NTE2916 Power MOSFET utilizes advanced processing techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO247 package is preferred for commercial−industrial applications where higher power levels preclude the use of TO220 devices.
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