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NTE2915 - N-Channel MOSFET

Features

  • D Low Gate.
  • to.
  • Drain Charge to Reduce Switching Losses D Fully Characterized to Simplify Design Capacitance Including Effective COSS D Fully Characterized Avalanche Voltage and Current.

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Datasheet Details

Part number NTE2915
Manufacturer NTE Electronics (defunct)
File Size 77.06 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE2915 Datasheet

Full PDF Text Transcription

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NTE2915 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package Features: D Low Gate−to−Drain Charge to Reduce Switching Losses D Fully Characterized to Simplify Design Capacitance Including Effective COSS D Fully Characterized Avalanche Voltage and Current Applications: D High Frequency DC−DC Converters D G S Absolute Maximum Ratings: Continuous TTCC = = Drain Current +255C . . . . . . +1005C . . . . . .(V. .G.S. ..... = .. .. 10V), ..... ..... .ID. . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31A 21A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . .
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