Datasheet4U Logo Datasheet4U.com

NES2527B-30 - 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

Description

The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band.

Internal input matching circuits are designed to optimize performance.

The device has a 0.8 µm gate length for increased linear gain.

Features

  • High output power.
  • High gain.
  • High power added efficiency.
  • Internally matched input.
  • High reliability 2.4 0.1 4.5 MAX 1.8 0.2 MAX.

📥 Download Datasheet

Datasheet Details

Part number NES2527B-30
Manufacturer NEC
File Size 37.70 KB
Description 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
Datasheet download datasheet NES2527B-30 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NES240-24 DIN rail mountable type 30 ~ 240W DENSEI-LAMBDA
NES240-28 DIN rail mountable type 30 ~ 240W DENSEI-LAMBDA
NES240-48 DIN rail mountable type 30 ~ 240W DENSEI-LAMBDA
NES120 DIN rail mountable type 30 ~ 240W DENSEI-LAMBDA
NES30-24 DIN rail mountable type 30 ~ 240W DENSEI-LAMBDA

Other Datasheets by NEC

Part Number Description
NES2427P-45 45 W S-BAND PUSH-PULL POWER GaAs MES FET
NES2427P-60 60 W S-BAND PUSH-PULL POWER GaAs MES FET
NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET
NES1823P-140 140 W L / S-BAND PUSH-PULL POWER GaAs MES FET

Full PDF Text Transcription

Click to expand full text
PRELIMINARY DATA SHEET GaAs MES FET NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 µm gate length for increased linear gain. technology. The device incorporates WSi (tungsten silicide) gate for high reliability and SiO2 glassivation for stability. surface To reduce thermal 17.4±0.3 PACKAGE DIMENSIONS (UNIT: mm) 24±0.3 20.4 SOURCE 1.0±0.1 GATE 2.4 8.0 R1.2 resistance, the device uses PHS (Plated Heat Sink) DRAIN FEATURES • High output power • High gain • High power added efficiency • Internally matched input • High reliability 2.4 0.1 4.5 MAX 1.8 0.
Published: |