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NES1823P-100 - 100W L-BAND PUSH-PULL POWER GaAs MESFET

Description

The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems.

It is capable of delivering 100 watts of output power with high linear gain, high efficiency and excellent distortion.

Features

  • Push-pull type N-channel GaAs MESFET.
  • High Output Power : 100 W TYP.
  • High Linear Gain : 11.0 dB TYP.
  • High Drain Efficiency: 50 % TYP. @VDS = 10 V, IDset = 6 A, f = 2.2 GHz.

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Datasheet Details

Part number NES1823P-100
Manufacturer NEC
File Size 154.63 KB
Description 100W L-BAND PUSH-PULL POWER GaAs MESFET
Datasheet download datasheet NES1823P-100 Datasheet

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Other Datasheets by NEC

Part Number Description
NES1823P-140 140 W L / S-BAND PUSH-PULL POWER GaAs MES FET
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NES1823P-45 45 W L / S-BAND PUSH-PULL POWER GaAs MES FET
NES1823P-50 50 W L-BAND PUSH-PULL POWER GaAs MES FET
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Full PDF Text Transcription

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PRELIMINARY DATA SHEET N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz with different maching. The device employs Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide and nitride passivation for superior performance, thermal characteristics, and reliability. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
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