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NES1823P-50 - 50 W L-BAND PUSH-PULL POWER GaAs MES FET

Description

The NES1823P-50 is a 50 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS, and IMT2000 base station systems.

It is capable of delivering 50 W of output power (CW) with high linear gain, high efficiency and excellent distortion.

Features

  • Push-pull type N-channel GaAs MES FET.
  • High output power: Pout = 50 W TYP.
  • High linear gain: GL = 10.5 dB TYP.
  • High power added efficiency: ηadd = 40 % TYP. @ VDS = 10.0 V, IDset = 4.0 A (total), f = 2.20 GHz.

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Datasheet Details

Part number NES1823P-50
Manufacturer NEC
File Size 44.31 KB
Description 50 W L-BAND PUSH-PULL POWER GaAs MES FET
Datasheet download datasheet NES1823P-50 Datasheet

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Other Datasheets by NEC

Part Number Description
NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET
NES1823P-140 140 W L / S-BAND PUSH-PULL POWER GaAs MES FET
NES1823P-30 30 W L-S BAND PUSH-PULL POWER GaAs MES FET
NES1823P-45 45 W L / S-BAND PUSH-PULL POWER GaAs MES FET
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Full PDF Text Transcription

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PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-50 50 W L-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-50 is a 50 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS, and IMT2000 base station systems. It is capable of delivering 50 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz. The device employs 0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability.
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