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NES1821B-30 - 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

Description

The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band.

Internal input matching circuits are designed to optimize performance.

The device has a 0.8 mm gate length for increased linear gain.

Features

  • DRAIN 0.1 2.4 0.2 MAX 4.5 MAX 1.8 High output power High gain High power added efficiency Internally matched input High reliability.

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Datasheet Details

Part number NES1821B-30
Manufacturer NEC
File Size 46.20 KB
Description 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
Datasheet download datasheet NES1821B-30 Datasheet

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Other Datasheets by NEC

Part Number Description
NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET
NES1823P-140 140 W L / S-BAND PUSH-PULL POWER GaAs MES FET
NES1823P-30 30 W L-S BAND PUSH-PULL POWER GaAs MES FET
NES1823P-45 45 W L / S-BAND PUSH-PULL POWER GaAs MES FET
NES1823P-50 50 W L-BAND PUSH-PULL POWER GaAs MES FET

Full PDF Text Transcription

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DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 mm gate length for increased linear gain. To reduce thermal resistance, the device uses PHS (Plated Heat Sink) technology. The device incorporates WSi (tungsten silicide) gate for high reliability and SiO2 glassivation for R1.2 17.4±0.3 8.0 2.4 SOURCE PACKAGE DIMENSIONS (UNIT: mm) 24±0.3 20.4 1.0±0.1 GATE surface stability. FEATURES · · · · · DRAIN 0.1 2.4 0.2 MAX 4.5 MAX 1.
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