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NES2427P-60 - 60 W S-BAND PUSH-PULL POWER GaAs MES FET

Description

The NES2427P-60 is a 60 W push-pull type GaAs MES FET designed for high power transmitter applications for MMDS, WLL repeater and base station systems.

It is capable of delivering 60 W of output power (CW) with high linear gain, high efficiency and excellent distortion.

Its primary band is 2.4 to 2.

Features

  • Push-pull type N-channel GaAs MES FET.
  • VDS = 10.0 V operation.
  • High output power: PO (1 dB) = 60 W TYP.
  • High linear gain: GL = 12.0 dB TYP.
  • High power added efficiency: ηadd = 35 % TYP. @ VDS = 10.0 V, IDset = 12.0 A (total), f = 2.50, 2.70 GHz.

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Datasheet Details

Part number NES2427P-60
Manufacturer NEC
File Size 44.49 KB
Description 60 W S-BAND PUSH-PULL POWER GaAs MES FET
Datasheet download datasheet NES2427P-60 Datasheet

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Other Datasheets by NEC

Part Number Description
NES2427P-45 45 W S-BAND PUSH-PULL POWER GaAs MES FET
NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
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Full PDF Text Transcription

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PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES2427P-60 60 W S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES2427P-60 is a 60 W push-pull type GaAs MES FET designed for high power transmitter applications for MMDS, WLL repeater and base station systems. It is capable of delivering 60 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary band is 2.4 to 2.7 GHz. The device employs 0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES • Push-pull type N-channel GaAs MES FET • VDS = 10.
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