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NEL2035F03-24 - NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

Description

NEL2035F03-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.

It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability.

Features

  • High Linear Power and Gain.
  • Low Internal Modulation Distortion.
  • High Reliability Gold Metallization.
  • Emitter Ballasting.
  • 24 V Operation 3 2.17 ±0.3 0.1 +0.05.
  • 0.02 1 -.

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Datasheet Details

Part number NEL2035F03-24
Manufacturer NEC
File Size 107.45 KB
Description NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
Datasheet download datasheet NEL2035F03-24 Datasheet

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Full PDF Text Transcription

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DATA SHEET SILICON POWER TRANSISTOR NEL2035F03-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2035F03-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability. OUTLINE DIMENSIONS (Unit: mm) 2.8 ±0.2 2 × φ 3.3 ±0.3 6.35 ±0.4 1.53 ±0.3 1 FEATURES • High Linear Power and Gain • Low Internal Modulation Distortion • High Reliability Gold Metallization • Emitter Ballasting • 24 V Operation 3 2.17 ±0.3 0.1 +0.05 –0.
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