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NEL200101-24 - NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

Description

NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.

It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability.

1.0 MIN.

Features

  • φ 7 ±0.3.
  • High Linear Power and Gain.
  • Low Internal Modulation Distortion.
  • High Reliability Gold Metallization.
  • 24 V Operation 1.6 ±0.3 2 2 ±0.2.
  • Emitter Ballasting 0.1.
  • 0.04 +0.06 3.0 6.2 ±0.2 1 1 -.

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Datasheet Details

Part number NEL200101-24
Manufacturer NEC
File Size 88.48 KB
Description NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
Datasheet download datasheet NEL200101-24 Datasheet

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Full PDF Text Transcription

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DATA SHEET SILICON POWER TRANSISTOR NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability. OUTLINE DIMENSIONS (Unit: mm) 1.0 MIN. 1.0 MIN. 0.2 1.2 –0.1 +0.2 1.5 ±0.2 3 FEATURES φ 7 ±0.3 • High Linear Power and Gain • Low Internal Modulation Distortion • High Reliability Gold Metallization • 24 V Operation 1.6 ±0.3 2 2 ±0.2 • Emitter Ballasting 0.1 –0.04 +0.06 3.0 6.2 ±0.
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