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NEL2012F03-24 - NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER

Description

The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications.

It is corporate emitter ballast resistors, gold metalizations and offers a high degree of reliability.

Features

  • High Linear Power and Gain Low Internal Modulation Distortion High Reliability Gold Metalization Emitter Ballasting 24 V Operation.

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Datasheet Details

Part number NEL2012F03-24
Manufacturer NEC
File Size 108.66 KB
Description NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER
Datasheet download datasheet NEL2012F03-24 Datasheet

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Full PDF Text Transcription

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PRELIMINARY DATA SHEET SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of reliability. FEATURES High Linear Power and Gain Low Internal Modulation Distortion High Reliability Gold Metalization Emitter Ballasting 24 V Operation APPLICATION Digital Cellular : PCN/PCS etc. Digital Cordless : PHS etc. ORDERING INFORMATION Part Number NEL2012F03-24 Package Outline F03 PACKAGE DIMENSIONS (Unit: mm) 2.8 ± 0.2 6.35 ± 0.4 PIN CONNECTIONS 1. EMITTER 2. BASE 3. COLLECTOR 14.35 ± 0.4 4.67 ± 0.4 2 × φ 3.3 ± 0.
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