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NEL2004F02-24 - NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

Description

NEL2004F02-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.

It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability.

Features

  • High Linear Power and Gain 4.2 ±0.4 0.1 +0.05.
  • 0.02 1 1 3 3.6 ±0.5 3.6 ±0.5 12.4 ±0.2 9.2 ±0.2 4.6 ±0.2.
  • Low Internal Modulation Distortion.
  • High Reliability Gold Metallization.
  • Emitter Ballasting.
  • 24 V Operation 1 -.

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Datasheet Details

Part number NEL2004F02-24
Manufacturer NEC
File Size 89.27 KB
Description NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
Datasheet download datasheet NEL2004F02-24 Datasheet

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Full PDF Text Transcription

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DATA SHEET SILICON POWER TRANSISTOR NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2004F02-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability. OUTLINE DIMENSIONS (Unit: mm) 2 2 ±0.2 3 ±0.2 2 ±0.2 2 × φ 3.2 ±0.3 1 1 5.85 ±0.2 2.58 ±0.3 FEATURES • High Linear Power and Gain 4.2 ±0.4 0.1 +0.05 –0.02 1 1 3 3.6 ±0.5 3.6 ±0.5 12.4 ±0.2 9.2 ±0.2 4.6 ±0.
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