NE651R479A Datasheet PDF - NEC 0.4 W L-BAND POWER GaAs HJ-FET Specs

NE651R479A - 0.4 W L-BAND POWER GaAs HJ-FET

Datasheet Summary

Description

The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems.

Features

GaAs HJ-FET structure.
High output power : Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm Pout = +29.5 dBm TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm.
High linear gain : GL = 14.0 dB TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = 0 dBm GL = 12.0 dB TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = 0 dBm GL = 12.0 dB TYP. @ VDS =.

Datasheet Details

Part number	NE651R479A
Manufacturer	NEC
File Size	69.20 KB
Description	0.4 W L-BAND POWER GaAs HJ-FET
Datasheet	NE651R479A Datasheet
Additional preview pages of the NE651R479A datasheet.

📁 Similar Datasheet

NE6510179A - MEDIUM POWER GaAs HJ-FET (CEL)

NE650 - Dolby B-Type Noise Reduction Circuit (Philips)

NE6500496 - L&S BAND MEDIUM POWER GaAs MESFET (California Eastern)

NE650103M - NECS 10 W L & S-BAND POWER GaAs MESFET (ETC)

NE600 - 1GHz LNA and mixer (NXP Semiconductors)

NE602 - NE602 (ETC)

NE602 - Double-Balanced Mixer and Oscillator (Philips)

NE602A - Double-Balanced Mixer and Oscillator (Philips)

NE604A - High Performance Low Power FM IF System (Philips)

NE605 - HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM (NXP)

Full PDF Text Transcription

Click to expand full text

DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent distortion and as a driver amplifier for our NE6510179A and NE6510379A. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES • GaAs HJ-FET structure • High output power : Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm Pout = +29.5 dBm TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.

Published: May 7, 2005 |