Datasheet4U Logo Datasheet4U.com

NE6510179A - MEDIUM POWER GaAs HJ-FET

Datasheet Summary

Description

NEC's NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications.

Features

  • LOW COST.

📥 Download Datasheet

Datasheet preview – NE6510179A

Datasheet Details

Part number NE6510179A
Manufacturer CEL
File Size 683.57 KB
Description MEDIUM POWER GaAs HJ-FET
Datasheet download datasheet NE6510179A Datasheet
Additional preview pages of the NE6510179A datasheet.

📁 Similar Datasheet

  • NE6510179A - 1 W L-BAND POWER GaAs HJ-FET (NEC)
  • NE6510179 - 1 W L-BAND POWER GaAs HJ-FET (NEC)
  • NE6510379A - 3 W L-BAND POWER GaAs HJ-FET (NEC)
  • NE651R479A - 0.4 W L-BAND POWER GaAs HJ-FET (NEC)
  • NE650 - Dolby B-Type Noise Reduction Circuit (Philips)
  • NE6500379 - 3W L / S-BAND POWER GaAs MESFET (NEC)
  • NE6500379A - 3W L / S-BAND POWER GaAs MESFET (NEC)
  • NE6500496 - 4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET (NEC)
  • NE6500496 - L&S BAND MEDIUM POWER GaAs MESFET (California Eastern)
  • NE650103M - NECS 10 W L & S-BAND POWER GaAs MESFET (ETC)
Other Datasheets by CEL
  • NE662M04 - NPN SILICON HIGH FREQUENCY TRANSISTOR
  • NE662M16 - NPN SILICON RF TRANSISTOR
  • NE662M16-A - NPN SILICON RF TRANSISTOR
  • NE662M16-T3-A - NPN SILICON RF TRANSISTOR
  • NE664M04-A - NPN SILICON RF TRANSISTOR
  • NE664M04-T2-A - NPN SILICON RF TRANSISTOR
  • NE67400 - (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
  • NE67483B - (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET

Full PDF Text Transcription

Click to expand full text
FunctionalONTINUED Characteristics NEC's 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE6510179A FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS • HIGH OUTPUT POWER: 35 dBm TYP with 5.0 V Vdc 32.5 dBm TYP with 3.5 V Vdc • HIGH LINEAR GAIN: 10 dB TYP at 1.9 GHz • LOW THERMAL RESISTANCE: 5°C/W DESCRIPTION NEC's NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 1.8 watts of output power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V with high linear gain, high efficiency, and excellent linearity.
Published: |