NE6500379 Datasheet PDF - NEC 3W L / S-BAND POWER GaAs MESFET Specs

NE6500379 - 3W L / S-BAND POWER GaAs MESFET

Datasheet Summary

Description

The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems.

It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion.

Features

High Output Power.
High Linear Gain : Po (1dB) = +35 dBm typ. : 10 dB typ.
High Power Added Efficiency: 50% typ. @VDS = 6 V, IDset = 500 mA, f = 1.9 GHz.

Datasheet Details

Part number	NE6500379
Manufacturer	NEC
File Size	88.53 KB
Description	3W L / S-BAND POWER GaAs MESFET
Datasheet	NE6500379 Datasheet
Additional preview pages of the NE6500379 datasheet.

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Full PDF Text Transcription

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DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES • High Output Power • High Linear Gain : Po (1dB) = +35 dBm typ. : 10 dB typ. • High Power Added Efficiency: 50% typ. @VDS = 6 V, IDset = 500 mA, f = 1.

Published: May 7, 2005 |