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NE6500496 - L&S BAND MEDIUM POWER GaAs MESFET

Datasheet Summary

Description

The NE6500496 is a medium power GaAs MESFET designed for up to a 4 W output stage or as a driver for high power devices.

The device has no internal matching and can be used from UHF frequencies up to 3.0 GHz.

Features

  • HIGH OUTPUT POWER: 4 W.
  • HIGH LINEAR GAIN: 11.5 dB.
  • HIGH.

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Datasheet Details

Part number NE6500496
Manufacturer California Eastern
File Size 34.16 KB
Description L&S BAND MEDIUM POWER GaAs MESFET
Datasheet download datasheet NE6500496 Datasheet
Additional preview pages of the NE6500496 datasheet.

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    Full PDF Text Transcription

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    L&S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS (TC= 25 °C unless otherwise noted) SYMBOLS VDSX VGDX VGSX IDS IGS PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature UNITS V V V A mA W °C °C RATINGS 15 -18 -12 4.5 25 25 175 -65 to +175 FEATURES • HIGH OUTPUT POWER: 4 W • HIGH LINEAR GAIN: 11.5 dB • HIGH EFFICIENCY (PAE): 45% • INDUSTRY STANDARD PACKAGING DESCRIPTION The NE6500496 is a medium power GaAs MESFET designed for up to a 4 W output stage or as a driver for high power devices. The device has no internal matching and can be used from UHF frequencies up to 3.0 GHz.
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