NCEP18N10AQ Datasheet PDF - NCE Power Semiconductor N-Channel Super Trench II Power MOSFET Specs

NCEP18N10AQ - N-Channel Super Trench II Power MOSFET

Datasheet Summary

Description

The NCEP18N10AQ uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

VDS =100V,ID =35A RDS(ON)=16.0mΩ (typical) @ VGS=10V RDS(ON)=18.0mΩ (typical) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 3.3X3.3 Top View Bottom View Package Marking and Ordering Information Device Marking Device Device Package NCEP18N10AQ NCEP18N10AQ DFN3.3X3.3-8L Reel Size - Schematic Diagram Tape width - Quantity - Abso.

Datasheet Details

Part number	NCEP18N10AQ
Manufacturer	NCE Power Semiconductor
File Size	322.09 KB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	NCEP18N10AQ Datasheet
Additional preview pages of the NCEP18N10AQ datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com NCEP18N10AQ NCE N-Channel Super Trench II Power MOSFET Description The NCEP18N10AQ uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features ● VDS =100V,ID =35A RDS(ON)=16.0mΩ (typical) @ VGS=10V RDS(ON)=18.0mΩ (typical) @ VGS=4.

Published: Oct 26, 2024 |