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NCEP018N85LL - N-Channel Super Trench II Power MOSFET

Datasheet Summary

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =85V,ID =320A RDS(ON)=1.3mΩ , typical @ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TOLL Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP018N85LL NCEP018N85LL TOLL Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol D.

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Datasheet Details

Part number NCEP018N85LL
Manufacturer NCE Power Semiconductor
File Size 403.39 KB
Description N-Channel Super Trench II Power MOSFET
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NCEP018N85LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ●Ideal for high-frequency switching and synchronous rectification General Features ● VDS =85V,ID =320A RDS(ON)=1.
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