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NCE9926 - NCE N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =20V,ID =6A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=2.5V Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.

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Datasheet Details

Part number NCE9926
Manufacturer NCE Power Semiconductor
File Size 356.96 KB
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE9926 Datasheet
Additional preview pages of the NCE9926 datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE9926 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =6A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=2.
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