Datasheet4U Logo Datasheet4U.com

NCE9435 - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V D G S Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet preview – NCE9435

Datasheet Details

Part number NCE9435
Manufacturer NCE Power Semiconductor
File Size 332.45 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE9435 Datasheet
Additional preview pages of the NCE9435 datasheet.
Other Datasheets by NCE Power Semiconductor

Full PDF Text Transcription

Click to expand full text
http://www.ncepower.com Pb Free Product NCE9435 NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.
Published: |