NCE0110K - N-Channel Enhancement Mode Power MOSFET

Description

The NCE0110K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =100V,ID =9.6A RDS(ON) < 140mΩ @ VGS=10V (Typ:108mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

NCE Power Semiconductor

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Datasheet Details

Part number	NCE0110K
Manufacturer	NCE Power Semiconductor
File Size	440.19 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0110K Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE0110K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =9.

Published: Jun 6, 2015 |