NCE0110AS - N-Channel Enhancement Mode Power MOSFET

Description

The NCE0110AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 100V,ID =10A RDS(ON) < 17mΩ @ VGS=10V (Typ:14mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current Schematic diagram.

NCE Power Semiconductor

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Datasheet Details

Part number	NCE0110AS
Manufacturer	NCE Power Semiconductor
File Size	437.55 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0110AS Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE0110AS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Feb 7, 2016 |