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SLH60R075E7D - 60V N-Channel MOSFET

Description

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 50A, 650V@ TJ,max, RDS(on)Typ =64mΩ@VGS = 10 V - Low gate charge(typ. Qg =80nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D D G S TO-263 G D S TO-247 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Aval.

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Datasheet Details

Part number SLH60R075E7D
Manufacturer Msemitek
File Size 1.10 MB
Description 60V N-Channel MOSFET
Datasheet download datasheet SLH60R075E7D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SLB60R075E7D/SLH60R075E7D SLB60R075E7D / SLH60R075E7D 600V N-Channel Super-JMOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies. Features - 50A, 650V@ TJ,max, RDS(on)Typ =64mΩ@VGS = 10 V - Low gate charge(typ.
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