Datasheet Details
| Part number | SLH60R043E7D |
|---|---|
| Manufacturer | Msemitek |
| File Size | 807.59 KB |
| Description | 600V N-Channel MOSFET |
| Datasheet |
 SLH60R043E7D Datasheet
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Description
This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
- - 65A, 600V@ TJ,max, RDS(on)Typ =36mΩ@VGS = 10 V - Fast Recovery Body-Diode - Ultra high ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G D S TO-247 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive A.