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SLH60R080SS - N-Channel MOSFET

Description

theacsh--nbL7oo.e6wlAeo,gng5ay0tee0.

Vsch,paRerDgcSe(oi(na)ttylylppy.

Features

  • - 47A, 600V, RDS(on) typ. = 68mΩ@VGS =10 V - Low gate charge ( typical 88nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS S.

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Datasheet Details

Part number SLH60R080SS
Manufacturer Maple Semiconductor
File Size 432.72 KB
Description N-Channel MOSFET
Datasheet download datasheet SLH60R080SS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SLH60R080SS General Description This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh--nbL7oo.e6wlAeo,gng5ay0tee0. Vsch,paRerDgcSe(oi(na)ttylylppy. i=cat0al .5i2lΩo5n@rCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion GDS TO-247 SLH60R080SS 600V N-Channel MOSFET Features - 47A, 600V, RDS(on) typ.
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