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SLH9N90C - 900V N-Channel MOSFET

Description

This Power MOSFET is produced using Msemitek‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 9A, 900V, RDS(on) typ. = 975mΩ@VGS = 10 V - Low gate charge ( typical 80nC) - Low Crss ( typical 36pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability D G G D S TO-220F G D S TO-247 S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Av.

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Datasheet Details

Part number SLH9N90C
Manufacturer Msemitek
File Size 1.69 MB
Description 900V N-Channel MOSFET
Datasheet download datasheet SLH9N90C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SLF9N90C / SLH9N90C SLF9N90C / SLH9N90C 900V N-Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. Features - 9A, 900V, RDS(on) typ.
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