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2N998 (SILICON)
Darlington amplifier containing two NPN silicon annular transistors is designed for applications requiring very high-gain, low-noise, and high-input impedance.
B,
CASE 20(8)
(TO·72)
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C
Derate above 25°C Total Device Dissipation @ TC = 25°C
Derate above 25°C Operating Junction Temperature Storage Temperature Range
Symbol VCEO VCB VEB IC Po
Po
TJ Tstg
2N998
60 100 15 500 0.5 2.86 1.8 10.3 +200 -65 to +200
Unit Vdc Vdc Vdc mAdc watt mW/oC Watts mW/oC °c °c
2-146
2N998 (continued)
ELECTRICAL CHARACTERISTICS CT. = 2O'C ..Ie.. oth....'.......
2N998 Datasheet
