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2N996 - PNPSILICON ANNULAR TRANSISTOR

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2N996 (SILICON) PNPSILICON ANNULAR TRANSISTOR · .. designed for general-purpose amplifier applications. • Collector-Emitter Sustaining Voltage - VCEO(sus) = 12 Vdc (Min) @ IC = 10 mAdc • Collector-Base Breakdown Voltage - BVCBO = 15 Vdc (Min) @IC = 10 J.LAdc • Emitter-Base Breakdown Voltage BVEBO = 4.0 Vdc (Min)@IE = 10J.LAdc PNPSILICON TRANSISTOR /! *MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation@TA "" 2SoC Derate above 25°C Total Device Dissipation @TC=: 25°C Derate above 2SoC Operating and Storage Junction Temperature Range • Indicates JEDEC Registered Data. Svmbol VCEO VCB VEB IC Po Po TJ.Tstg Value 12 15 4.0 200 360 2.06 1.2 6.
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