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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BCW29LT1/D
General Purpose Transistors
PNP Silicon
COLLECTOR 3 1 BASE 2 EMITTER
BCW29LT1 BCW30LT1
3 1
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous Symbol VCEO VCBO VEBO IC Value –32 –32 –5.0 –100 Unit Vdc Vdc Vdc mAdc
2
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.
BCW29LT1 Datasheet
