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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES ᴌComplementary to BCW31/32
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
-30
Collector-Emitter Voltage
VCEO
-20
Emitter-Base Voltage
VEBO
-5
Collector Current
IC -100
Collector Power Dissipation
PC * 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -65ᴕ150
* : Package Mounted On 99.9% Alumina 10ᴧ8ᴧ0.6mm.
UNIT V V V mA mW ᴱ ᴱ
A G H
D
BCW29/30
EPITAXIAL PLANAR PNP TRANSISTOR
E L BL
23 1
PP
M 1. EMITTER 2. BASE 3. COLLECTOR
DIM A B C D E G H J
K L M
N P
MILLIMETERS 2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20
1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN
1.00+0.20/-0.
BCW29 Datasheet
