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SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
BCW68
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IE PC * Tj Tstg
-60 -45 -5 -800 800 350 150 -55 150
* : Package Mounted On 99.9% Alumina 10 8 0.6mm.
UNIT V V V mA mA mW
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q 0.1 MAX
M
1. EMITTER 2. BASE 3.
BCW68 Datasheet
