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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
3 COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous
V CEO V CBO V EBO
IC
2 BASE
Value –32 –32 –5.0 –100
1 EMITTER
Unit Vdc Vdc Vdc mAdc
BCW29LT1 BCW30LT1
3
1 2
CASE 318–08, STYLE 6 SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
RθJA PD
RθJA TJ , Tstg
Max Unit
225 mW 1.8 mW/°C 556 °C/W
300 mW 2.
BCW29LT1 Datasheet
