BCW61CLT1 - General Purpose Transistors

Features

the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT.
23 package, PD can be calculated as follows: PD = TJ(max).
TA RθJA.

Motorola Inc

Datasheet Details

Part number	BCW61CLT1
Manufacturer	Motorola
File Size	394.84 KB
Description	General Purpose Transistors
Datasheet	BCW61CLT1 Datasheet
Additional preview pages of the BCW61CLT1 datasheet.

📁 Similar Datasheet

BCW61C - PNP general purpose transistors (NXP)
BCW61C - PNP Silicon AF Transistors (For AF input stages and driver applications High current gain) (Siemens Semiconductor Group)
BCW61C - PNP Silicon AF Transistors (Infineon)
BCW61C - Transistor (Fairchild Semiconductor)
BCW61C - (BCW61x) Surface Mount General Purpose Si-Epi-Planar Transistors (Diotec Semiconductor)
BCW61C - Small Signal Transistors (Vishay)
BCW61C - SILICON PLANAR EPITAXIAL TRANSISTORS (CDIL)
BCW61C - PNP SILICON TRANSISTOR (Central Semiconductor)
BCW61C - PNP Plastic Encapsulated Transistor (SeCoS)
BCW61C - General Purpose Transistor (Kexin)

Other Datasheets by Motorola Inc

BCW61BLT1 - General Purpose Transistors
BCW61DLT1 - General Purpose Transistors
BCW60ALT1 - General Purpose Transistors
BCW60BLT1 - General Purpose Transistors
BCW60DLT1 - General Purpose Transistors
BCW65ALT1 - General Purpose Transistor
BCW68GLT1 - Transistor
BCW69LT1 - General Purpose Transistors

Full PDF Text Transcription

Click to expand full text

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW61BLT1/D General Purpose Transistors PNP Silicon COLLECTOR 3 1 BASE BCW61BLT1 BCW61CLT1 BCW61DLT1 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –32 –32 –5.0 –100 2 EMITTER Unit Vdc Vdc Vdc mAdc 1 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.

Published: Mar 23, 2005 |