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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BCW68GLT1/D
General Purpose Transistor
PNP Silicon
COLLECTOR 3 1 BASE 2 EMITTER
BCW68GLT1
3 1 2
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –45 –60 –5.0 –800 Unit Vdc Vdc Vdc mAdc
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
DEVICE MARKING
BCW68GLT1 = DH
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.
BCW68GLT1 Datasheet
