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M54567FP - 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY

General Description

M54567P and M54567FP are four-circuit Darlington transistor arrays with clamping diodes.

The circuits are made of PNP and NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

Key Features

  • High breakdown voltage (BV CEO ≥ 50V) High-current driving (Ic(max) = 1.5A) With clamping diodes Driving available with NMOS IC output Wide operating temperature range (Ta =.
  • 20 to +75°C) OUTPUT2 O2← 7 VCC 8 16P4(P) Package type 16P2N-A(FP).

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Full PDF Text Transcription for M54567FP (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for M54567FP. For precise diagrams, and layout, please refer to the original PDF.

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54567P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54567P and M54567FP are four-circuit Darlingt...

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CLAMP DIODE DESCRIPTION M54567P and M54567FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION VCC OUTPUT1 1 16 COM COMMON O1← 2 15 →O4 OUTPUT4 14 ←IN4 INPUT4 13  12  INPUT1 IN1→ 3  4 GND   5 INPUT2 IN2→ 6  GND 11 ←IN3 INPUT3 10 →O3 OUTPUT3 9 COM COMMON FEATURES High breakdown voltage (BV CEO ≥ 50V) High-current driving (Ic(max) = 1.

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