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M54563FP - 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY

General Description

M54563FP is an eight-circuit output-sourcing Darlington transistor array.

The circuits are made of PNP and NPN transistors.

This semiconductor integrated circuit performs highcurrent driving with extremely low input-current supply.

Key Features

  • High breakdown voltage (BV CEO ≥ 50V) High-current driving (Io(max) =.
  • 500mA) With clamping diodes Driving available with PMOS IC output of 6 ~ 16V or with TTL output Wide operating temperature range (Ta =.
  • 20 to +75°C) Output current-sourcing type Package type 18P4G(P) NC 1 20 NC.

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Full PDF Text Transcription for M54563FP (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for M54563FP. For precise diagrams, and layout, please refer to the original PDF.

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54563P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54563FP is an eight-circuit outp...

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R ARRAY WITH CLAMP DIODE DESCRIPTION M54563FP is an eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs highcurrent driving with extremely low input-current supply.

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