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M54562P - 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY

General Description

M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays.

The circuits are made of PNP and NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

Key Features

  • High breakdown voltage (BV CEO ≥ 50V) High-current driving (Io(max) =.
  • 500mA) With output clamping diodes Driving available with PMOS IC output of 6 ~ 16V or with TTL output Wide operating temperature range (Ta =.
  • 20 to +75°C) Output current-sourcing type Package type 18P4G(P) NC 1 20 NC.

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Full PDF Text Transcription for M54562P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for M54562P. For precise diagrams, and layout, please refer to the original PDF.

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-ci...

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R ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

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