M54564FP - 8 Unit 500mA Source Type Darlington Transistor Array
Mitsubishi Electric
Download the M54564FP datasheet PDF.
This datasheet also covers the M54564P variant, as both devices belong to the same 8 unit 500ma source type darlington transistor array family and are provided as variant models within a single manufacturer datasheet.
General Description
Darlington transistor arrays.
and NPN transistors.
Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
Key Features
High breakdown voltage (BVCEO ≥ 50V)
High-current driving (Io(max) =.
500mA)
mWith output pulldown resistance (Driving available with ofluorescent display tube)
Driving available with PMOS IC output or with TTL output
. cWide operating temperature range (Ta =.
Full PDF Text Transcription for M54564FP (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
M54564FP. For precise diagrams, and layout, please refer to the original PDF.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54564P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54564P and M54564FP are eight-circuit output-sour...
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R ARRAY DESCRIPTION M54564P and M54564FP are eight-circuit output-sourcing PIN CONFIGURATION Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. IN1→ 1 IN2→ 2 IN3→ 3 18 →O1 17 →O2 16 →O3 IN4→ 4 15 →O4 INPUT OUTPUT IN5→ 5 14 →O5 FEATURES High breakdown voltage (BVCEO ≥ 50V) High-current driving (Io(max) = –500mA) mWith output pulldown resistance (Driving available with ofluorescent display tube) Driving available with PMOS IC output or with TTL
M54564FP Datasheet
