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M54527P - 6-UNIT 150mA DARLINGTON TRANSISTOR ARRAY

General Description

M54527P is six-circuit Darlington transistor arrays with clamping diodes.

The circuits are made of NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

Key Features

  • q High breakdown voltage (BVCEO ≥ 40V) q High-current driving (Ic(max) = 150mA) q With clamping diodes q Driving available with PMOS IC output of 8-18V q Wide input voltage range (VI =.
  • 40 to +40V) q Wide operating temperature range (Ta =.
  • 20 to +75 °C) IN6→ 6 GND 7 Outline 14P4.

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Full PDF Text Transcription for M54527P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for M54527P. For precise diagrams, and layout, please refer to the original PDF.

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54527P 6-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54527P is six-circuit Darlington transistor arr...

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AMP DIODE DESCRIPTION M54527P is six-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.