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M54522P - 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

General Description

M54522P and M54522FP are eight-circuit Darlington transistor arrays with clamping diodes.

The circuits are made of NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

Key Features

  • High breakdown voltage (BVCEO ≥ 40V) High-current driving (Ic(max) = 400mA) With clamping diodes Driving available with PMOS IC output Wide operating temperature range (Ta =.
  • 20 to +75°C) Package type 18P4G(P) NC 1 20 NC.

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Full PDF Text Transcription for M54522P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for M54522P. For precise diagrams, and layout, please refer to the original PDF.

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54522P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54522P and M54522FP are eight-circuit Darlin...

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CLAMP DIODE DESCRIPTION M54522P and M54522FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

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