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M54526FP - 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY

General Description

M54526P and M54526FP are seven-circuit Darlington transistor arrays with clamping diodes.

The circuits are made of NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

Key Features

  • High breakdown voltage (BV CEO ≥ 50V) High-current driving (Ic(max) = 500mA) With clamping diodes Driving available with PMOS IC output of 8-18V Wide operating temperature range (Ta =.
  • 20 to +75°C) 16P4(P) Package type 16P2N-A(FP).

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Full PDF Text Transcription for M54526FP (Reference)

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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54526P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54526P and M54526FP are seven-circuit Darlin...

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CLAMP DIODE DESCRIPTION M54526P and M54526FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.