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M54523FP - 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY

General Description

M54523P and M54523FP are seven-circuit Darlington transistor arrays with clamping diodes.

The circuits are made of NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

Key Features

  • q High breakdown voltage (BV CEO ≥ 50V) q High-current driving (IC(max) = 500mA) q With clamping diodes q Driving available with PMOS IC ouput q Wide operating temperature range (Ta =.
  • 20 to +75 °C).

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Full PDF Text Transcription for M54523FP (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for M54523FP. For precise diagrams, and layout, please refer to the original PDF.

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54523P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54523P and M54523FP are seven-circuit Darlin...

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CLAMP DIODE DESCRIPTION M54523P and M54523FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

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