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RD07MVS1 - Silicon MOSFET Power Transistor

Description

RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz

High Efficiency: 60%typ.

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MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 0.2+/-0.05 (0.22) Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 4.9+/-0.15 1.0+/-0.05 •High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz •High Efficiency: 60%typ. (175MHz) •High Efficiency: 55%typ. (520MHz) 2 APPLICATION For output stage of high power amplifiers in VHF/UHF band mobile radio sets.
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