Datasheet4U Logo Datasheet4U.com

RD0106T - High-Speed Switching Diode

Features

  • Diffused Junction Silicon Diode Low VF.
  • High-Speed Switching Diode High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low forward voltage (VF max=1.3V). Low switching noise. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 600 1 Sine wave.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RD01MUS1 Silicon RF Power MOS FET Mitsubishi Electric
RD01MUS2 Silicon MOSFET Power Transistor Mitsubishi Electric
RD01MUS2B Silicon MOSFET Power Transistor Mitsubishi Electric Semiconductor
RD00HHS1 RoHS Compliance Mitsubishi Electric
RD00HVS1 RoHS Compliance Mitsubishi Electric

Other Datasheets by SANYO (now Panasonic)

Part Number Description
RD0504T High-Speed Switching Diode
RD0506T High-Speed Switching Diode

Full PDF Text Transcription

Click to expand full text
www.DataSheet.co.kr Ordering number : ENA1704 RD0106T SANYO Semiconductors DATA SHEET RD0106T Features • • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low forward voltage (VF max=1.3V). Low switching noise. Halogen free compliance.
Published: |